Mask alignment – MA BA6

MA BA6 Gen4

Description of equipment:

BA6 Gen4 is a system for research institutions, universities and for sample production. The main focus is on flexibility in terms of procedures with wave lengths of 365 nm and 405 nm in 4 different mapping modes, from proximity to vacuum. Allows alignment on the front and also on the back. It uses UV NIL printing techniques and as an additional option (currently uninstalled) alignment and merge slices.

Technical data:

The alignment allows operation in 4 standard modes using 100 mm wafers with the following resolutions:

  • Vacuum Contact – 0.7 um
  • Solid Contact – 1.0 um
  • Soft Contact – 2.0 um
  • Proximity mapping – 3 um at 20 um remoteness

On the front side reaches the accuracy of the alignment 0.25 um and on the back 1 um.

Size of round substrates – wafers used varies from diameter 2 “to 150 mm, size of pieces from 2” x 2 “to 6″ x 6 ” and size of photo-lithographic masks 5″ x 5 “or 6″ x 6 ” with thickness up to 3.05 mm.

System incorporates split field microscope with lenses 5 x 0.15 and digital magnification on CCD camera.

The LED LH UV400 allows illumination with a high intensity of 60 mW/cm2 and 2.5% uniformity.

The manufacturer’s page with other information about the equipment.